Characteristic length of phonon transport within periodic nanoporous thin films and two-dimensional materials

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Cross-plane phonon transport in thin films

We predict the cross-plane phonon thermal conductivity of Stillinger-Weber silicon thin films as thin as 17.4 nm using the lattice Boltzmann method. The thin films are modeled using bulk phonon properties obtained from harmonic and anharmonic lattice dynamics calculations. We use this approach, which considers all of the phonons in the first Brillouin-zone, to assess the suitability of common a...

متن کامل

Phonon transport in periodic silicon nanoporous films with feature sizes greater than 100 nm

The thermal conductivities of solid silicon thin films and silicon thin films with periodic pore arrays are predicted using a Monte Carlo technique to include phonon-boundary scattering and the Boltzmann transport equation. The bulk phonon properties required as input are obtained from harmonic and anharmonic lattice dynamics calculations. The force constants required for the lattice dynamics c...

متن کامل

Phonon-mediated electron transport through CaO thin films.

Scanning tunneling microscopy has developed into a powerful tool for the characterization of conductive surfaces, for which the overlap of tip and sample wave functions determines the image contrast. On insulating layers, as the CaO thin film grown on Mo(001) investigated here, direct overlap between initial and final states is not enabled anymore and electrons are transported via hopping throu...

متن کامل

Toward phonon-boundary engineering in nanoporous materials

The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2016

ISSN: 0021-8979,1089-7550

DOI: 10.1063/1.4959984